Power Integrations Launches 1700 V GaN InnoMux-2 IC, Setting New High-Voltage Standards
- Power Integrations launched the 1700 V GaN InnoMux-2 IC, achieving over 90% efficiency from a 1000 VDC bus.
- The InnoMux-2 IC surpasses previous voltage ratings, positioning Power Integrations as a leader in high-voltage solutions.
- Power Integrations offers samples and a free reference design, supporting engineers in adopting the new technology.
Power Integrations Sets a New Standard with 1700 V GaN InnoMux-2 IC Launch
Power Integrations, a leader in high-voltage integrated circuits, has recently introduced the 1700 V GaN InnoMux-2 IC, marking a significant advancement in gallium nitride (GaN) technology. This innovative integrated circuit achieves over 90% efficiency from a 1000 VDC bus, delivering up to 70 W across three accurately regulated outputs. The InnoMux-2 is the first device in its class to reach a 1700 V rating, surpassing the company's previous milestones of 900 V and 1250 V achieved in recent years. This leap in voltage rating positions Power Integrations as a frontrunner in the evolving landscape of high-voltage power solutions.
Designed specifically for flyback configurations, the InnoMux-2 IC boasts impressive regulation accuracy within one percent, effectively eliminating the need for post regulators. This not only enhances system efficiency by approximately 10% but also simplifies design complexity for engineers and developers. Radu Barsan, the vice president of technology at Power Integrations, emphasizes the rapid strides made in GaN technology, showcasing the firm’s commitment to innovation and leadership in the sector. The introduction of this IC is a testament to the company's ability to consistently push the boundaries of what is achievable in power electronics.
The InnoMux-2 IC is poised to replace expensive silicon carbide (SiC) transistors in a variety of power supply applications, including automotive charging systems, solar inverters, and industrial power systems. According to industry insights from Ezgi Dogmus at Yole Group, the 1700 V rating is the highest currently available for commercially sold GaN high electron mobility transistors (HEMTs). As the market for Power GaN devices is projected to reach $2 billion by 2030, this product launch positions Power Integrations favorably against competitors, particularly given the cost benefits associated with GaN over SiC technologies.
In addition to the launch, Power Integrations offers samples of the InnoMux-2 IC for $4.90 per unit at quantities of 10,000 or more. To facilitate development, a reference design for a 60 W dual-output power supply is available for free on the Power Integrations website, enabling engineers to quickly adopt and implement this cutting-edge technology in their projects. This strategic move not only highlights the company’s dedication to supporting its customers but also reinforces its leading role in the power electronics industry.
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